首页> 外文OA文献 >Stochastic theory of singly occupied ion channels. II. Effects of access resistance and potential gradients extending into the bath.
【2h】

Stochastic theory of singly occupied ion channels. II. Effects of access resistance and potential gradients extending into the bath.

机译:单占据离子通道的随机理论。二。接触电阻和电位梯度的影响延伸到熔池中。

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

In a previous paper (Jakobsson, E., and S. W. Chiu. 1987. Biophys. J. 52:33-46), we presented the stochastic theory of the singly occupied ion channel as applied to sodium permeation of gramicidin channels, with the assumption of perfect equilibration between the bathing solutions and the ends of the ion channel. In the present paper we couple the previous theory to electrodiffusion of ions from the bulk of the bathing solution to the channel mouth. Our electrodiffusion calculations incorporate estimates of the potential gradients near the channel mouth due to image forces and due to the fraction of the applied potential that falls beyond the ends of the channel. To keep the diffusion calculation one-dimensional, we make the assumption that the electrical potentials in the bath exhibit hemispherical symmetry. As in the previous paper, the flux equations are fit to data on sodium permeation of normal gramicidin A, and gramicidins modified by the fluorination of the valine at the No. 1 position (Barrett Russell, E. W., L. B. Weiss, F. I. Navetta, R. E. Koeppe II, and O. S. Anderson. 1986. Biophys. J. 49:673-686). The conclusions of our previous paper with respect to the effect of fluorination on the mobility, surface potential well depth, and central barrier, are confirmed. However the absolute values of these quantities are somewhat changed when diffusive resistance to the mouth is taken into account, as in the present paper. Future possibilities for more accurate calculations by other methods are outlined.
机译:在先前的论文中(Jakobsson,E.和SW Chiu。1987. Biophys。J. 52:33-46),我们提出了单占有离子通道的随机理论,该理论适用于短杆菌肽通道的钠渗透,假设溶液与离子通道末端之间的完美平衡。在本文中,我们将先前的理论与离子从大量沐浴溶液到通道口的电扩散联系起来。我们的电扩散计算结合了由于图像力和落在通道末端之外的施加电势的一部分而导致的通道口附近电势梯度的估计。为了使扩散计算保持一维,我们假设镀液中的电势呈现半球形对称性。与以前的论文一样,通量方程适合于正常短杆菌肽A的钠渗透数据,以及通过1位缬氨酸的氟化作用修饰的短杆菌肽(Barrett Russell,EW,LB Weiss,FI Navetta,RE Koeppe II。和OS Anderson.1986.Biophys.J.49:673-686)。我们关于氟化对迁移率,表面势阱深度和中心势垒的影响的结论得到了证实。但是,如本论文所述,当考虑到口腔的扩散阻力时,这些量的绝对值会有所变化。概述了通过其他方法进行更精确计算的未来可能性。

著录项

  • 作者

    Chiu, S W; Jakobsson, E;

  • 作者单位
  • 年度 1989
  • 总页数
  • 原文格式 PDF
  • 正文语种 en
  • 中图分类

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号